LMG2610 Overview
The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces ponent count, and reduces board space by integrating halfbridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package. The asymmetric GaN FET resistances are optimized for...
LMG2610 Key Features
- 650-V GaN power-FET half bridge
- 170-mΩ low-side and 248-mΩ high-side GaN FETs
- Integrated gate drivers with low propagation delays
- Current-sense emulation with high-bandwidth and
- Low-side / high-side gate-drive interlock
- High-side gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up : < 8 us
- Low-side / high-side cycle-by-cycle over-current
- Over-temperature protection with FLT pin reporting