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LMG2610 Datasheet Integrated 650-v Gan Half Bridge

Manufacturer: Texas Instruments

Overview: LMG2610 SNOSDE2A – OCTOBER 2022 – REVISED DECEMBER 2022 LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters.

General Description

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications.

The LMG2610 simplifies design, reduces component count, and reduces board space by integrating halfbridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions.

Key Features

  • 650-V GaN power-FET half bridge.
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs.
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control.
  • Current-sense emulation with high-bandwidth and high accuracy.
  • Low-side / high-side gate-drive interlock.
  • High-side gate-drive signal level shifter.
  • Smart-switched bootstrap diode function.
  • High-side start up : < 8 us.
  • Low-side / high-side cycl.

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